王茂

王茂

一、基本信息

学历/学位：博士 (Dr. rer. nat.)

职    称：副研究员

职    务：专职科研

主讲课程：大学物理实验、近代物理实验

研究兴趣：物理学：凝聚态物理，先进半导体材料物理与器件

1. 基于超掺杂半导体材料的红外光电子器件

2. 宽禁带半导体材料的掺杂及光电特性研究

3. 离子束对半导体材料的辐照损伤效应及物性研究

招生信息：每年招收硕士研究生1-2名，本科生1-2名

办公地址：四川师范大学成龙校区第一实验楼南204

联系方式：mwang276139@163.com

个人主页：

https://scholar.google.com/citations?user=2ChAHDoAAAAJ&hl=en

https://orcid.org/0000-0003-4606-7203

https://www.researchgate.net/profile/Mao-Wang-11

二、个人简介

2019年博士毕业于德国德累斯顿工业大学(Technische Universität Dresden)物理学专业。攻读博士学位期间在德国亥姆霍兹德累斯顿罗森多夫研究中心(Helmholtz-Zentrum Dresden-Rossendorf，HZDR)开展课题研究工作。获得博士学位后，任职于HZDR，并获得德国科学基金会(DFG)研究项目基金。2022年入职四川师范大学物理与电子工程学院，主要研究方向为半导体材料的掺杂及光电特性研究、硅基红外光电子器件以及离子束对半导体材料的辐照损伤效应及物性研究。由于在离子束与半导体材料研究方面的贡献，荣获2024年国际离子束与材料改性领域(International Conference on Ion Beam Modification of Materials) IBMM prize，并做作大会特邀报告。目前以第一作者(通讯作者)在Acta Materialia, Physical Review B、Physical Review Applied, Applied Physics Letters, Advanced Optical Materials, Nanoscale以及Applied Surface Science等期刊发表学术论文10余篇，以联合作者发表学术论文50余篇，总引用次数2000余次。

三、科研项目

1. 德国科学基金会 (Deutsche Forschungsgemeinschaft, DFG), MIR Breitband-Photodetektor bei Raumtemperatur auf der Basis von Si:Te für die Integration auf Wafer-Ebene, No. WA 4804/1-1; 2020.11-2023.10; 21.6万欧元；主持

2. 国家自然科学基金青年科学基金项目, 基于离子束技术的硅基室温红外光电探测器及其光电特性研究, No. 12205212; 2023.1.1-2025.12.31; 30万; 主持

3. 四川省科技厅青年科学基金项目，基于离子束技术的超掺杂低维纳米材料的光电特性及其应用研究, No. 2024NSFSC1355; 2024.1.1-2025.12.31; 10万; 主持

四、代表论著

1. Hang Liu, Yunxia Zhou, M. S. Shaikh, Yijia Huang, Jianqi Zhu, R. Heller, U. Kentsch, Ling Li, Mingyang Tian, S. Zhou, Mao Wang*, Achieving ultralow contact resistivity in Si via Te hyperdoping and millisecond post-metallization annealing, Acta Materialia 278, 120269 (2024).

2. Songyuan Peng, Tingting Wang, M. S. Shaikh, Mingyang Tian, Yijia Huang, R. Heller, Jianqi Zhu, Yarong Su, Yun Li, Z. Xie, Ling Li, S. Zhou, Mao Wang*, Enhanced near-infrared absorption in Au-hyperdoped Si: interplay between mid-gap states and plasmon resonance, Optics Express 32, 32966 (2024).

3. Mao Wang*, M. S. Shaikh, Y. Li, S. Prucna, J. Zuk, M. Turek, A. Drozdziel, K. Pyszniak, L. Rebohle, U. Kentsch, M. Helm, S. Zhou, Charge transport in n-type As- and Sb-hyperdoped Ge, Applied Physics Letters 124, 142107 (2024).

4. Mao Wang*, Hang Liu, M.S. Shaikh, R. Heller, U. Kentsch, Ling Li, S. Zhou, Tunable magneto-transport properties in ultra-high Bi-doped Si prepared by liquid phase epitaxy, Applied Surface Science 652,159306 (2024).

5. Mao Wang*, M. S. Shaikh, U. Kentsch, R. Heller and Shengqiang Zhou, Sub-band gap infrared absorption in Si implanted with Mg, Semiconductor Science and Technology 38, 014001 (2023).

6. Mao Wang*, Y. Yu, S. Prucnal, Y. Berencén, M. S. Shaikh, L. Rebohle, M. B. Khan, V. Zviagin,R. Hübner, A. Pashkin, A. Erbe, Y. M. Georgiev, M. Grundmann,  M. Helm, R. Kirchner, S. Zhou, Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon, Nanoscale 14, 2826–2836 (2022).

7. M. S. Shaikh, Mao Wang*, R. Hübner, Maciej Oskar Liedke, M. Butterling, D. Solonenko, Zichao Li, Yufang Xie, D. R. T. Zahn, A. Wagner, M. Helm and Shengqiang Zhou, Phase evolution of Te-hyperdoped Si upon furnace annealing, Applied Surface Science 567, 150775 (2021) (*: corresponding author)

8. Mao Wang*, A. Debernardi, Wenxu Zhang, Chi Xu, Ye Yuan, Yufang Xie, Y. Berencén, S. Prucnal, M. Helm, and Shengqiang Zhou, Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si, Physical Review B 102, 085204 (2020).

9. Mao Wang*, E. García-Hemme, Y. Berencén, S. Prucnal, C. Xu, Y. Yuan, L. Rebohle, M. Helm and S. Zhou, Silicon-Based Intermediate-Band Infrared Photodetector Realized by Te Hyperdoping, Advanced Optical Materials, 2001546 (2020).

10. Mao Wang*, Y. Berencén, Room‐Temperature Infrared Photoresponse from Ion Beam–Hyperdoped Silicon, Physica Status Solidi A, 202000260 (2020).

11. Mao Wang*, A. Debernardi, Y. Berencén, R. Heller, C. Xu, Y. Yuan, Y. Xie, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Prucnal, and S. Zhou, Breaking the doping limit in silicon by deep impurities, Physical Review Applied 11, 054039 (2019).

12. Mao Wang*, R. Hubner, C. Xu, Y. Xie, Y. Berencén, R. Heller, L. Rebohle, M. Helm, S. Prucnal, and S. Zhou, Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical, and optical properties, Physical Review Materials 3, 044606 (2019).

13. Mao Wang*, Y. Berencén, E. García-Hemme, S. Prucnal, R. Hübner, Y. Yuan, C. Xu, L. Rebohle, R. Böttger, R. Heller, H. Schneider, W. Skorupa, M. Helm, and S. Zhou, Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature, Physical Review Applied 10, 024054 (2018).

14. F. Liu, M. Wang*, Y. Berencén, S. Prucnal, M. Engler, R. Hübner, Y. Yuan, R. Heller, R. Böttger, L. Rebohle, W. Skorupa, M. Helm and S. Zhou, On the insulator-to-metal transition in titanium-implanted silicon, Scientific Reports 8, 4164 (2018). (*: corresponding author)

15. M. C. Wang,^⊥ Mao Wang,^⊥ Hung-Hsuan Lin, M. Ballabio, Haixia Zhong, M. Bonn, Shengqiang Zhou, T. Heine, E. Canovas, ́ Renhao Dong, and Xinliang Feng, High-Mobility Semiconducting Two-Dimensional Conjugated Covalent Organic Frameworks with pType Doping, Journal of the American Chemical Society 142, 21622−21627 (2020). (^⊥equal contribution)  

16. Z. Wang,^⊥ Lisa S. Walter,^⊥ Mao Wang,^⊥ P. St. Petkov, Baokun Liang, Haoyuan Qi, Nguyen Ngan Nguyen , M. Hambsch, Haixia Zhong, Mingchao Wang, SangWook Park, L. Renn, K. Watanabe, T. Taniguchi , S. C. B. Mannsfeld, T. Heine, U. Kaise, Shengqiang Zhou, R. T. Weitz, Xinliang Feng and Renhao Dong, Interfacial Synthesis of Layer-Oriented 2D Conjugated Metal−Organic Framework Films toward Directional Charge Transport, Journal of the American Chemical Society 143, 34, 13624–13632 (2021). (^⊥equal contribution)

五、人才培养

现指导硕士研究生5名。

六、学术交流

2019.01-03 Universidad Complutense de Madrid, 短期访问学者

2017.07-08 European Synchrotron Radiation Facility (ESRF), 短期访问学者

【编辑：张赟】